Associate Professor
Titas Dasgupta
Email: titas[dot]dasgupta[at]iitb[dot]ac[dot]in
Phone: (+91) (022) 2576 7627
Education:
- PhD Materials Research Center, IISc, Bangalore, 2007
- MSc(Engg) Materials Research Center, IISc, Bangalore, 2002
Some courses taught are:
Undergraduate Courses: Electronic Properties of Materials, Instrumentation and Process Control
Postgraduate Courses: Thermo electric Materials, Modelling and Analysis
Our research group (Thermoelectric Materials and Devices Lab) is specifically interested in bulk thermoelectric materials for Power Generation. Some of our current research activities are listed below: a) High performance materials discovery by engineering electrical and thermal properties: Material systems which are currently being investigated are solid solutions of Mg2SiMg2Sn, Mg3Sb2Mg3Bi2 and ZnSbCdSb. Solid solutions are known to possess better thermoelectric properties compared to the end members. This is due to the possibility for tuning both the electrical and thermal properties by varying the chemical composition. Our work involves improving TE properties in these solid solutions using a combination of conventional techniques and material specific effects identified from our research. b) Modelling of electronic band structure of thermoelectric materials: Band structure modelling is a topic of interest in TE research as it provides valuable information regarding microscopic material parameters and also for predicting high performance compositions. The modelling work carried out in our group can be subdivided into (i) solutionbased approach and (ii) refinementbased optimization approach. We have recently developed a refinement based technique (MBRT) which can handle multiple EBS variables and therefore provide information in TE materials with complex band structures. c) Thermoelectric device fabrication and measu rements: Our research also involves development of suitable electrodes (contacting) and fabrication of TE modules from the in house developed materials and their property measurements. We have developed a generic approach for contacting (multilayer contacting technique) TE materials and demonstrated a conversion efficiency of up to 10% using the high performance materials developed in our group.
- Thermoelectric materials and devices
- Charge and Heat Transport Modelling in semiconductors
- Thermoelectric metrology and instrumentation
Thermoelectric performance (zT) enhancement due to formation of embedded nanoprecipitates in Mg2Si0.3Sn0.7
Estimation of electronic band structure parameters and calculation of thermoelectric properties in Mg2Si using the MBRT technique
Demonstration of 10% conversion efficiency in a single leg Mg3Sb1.5Bi0.5 thermoelectric device